ZnSe-based II-VI crystals implanted with Transition Metals (TM)
ZnSe is wide bandgap semiconductor with cubic crystallographic structure. Ternary compound with a different atomic ration of magnesium or manganese and beryllium gives us the opportunity to change compound bandgap and lattice constant. Sets of bulk (Zn,Mg)Se (Mg at.% ~5%) and (Zn,Mn,Be)Se (Mn at.% ~7%, Be at.% ~5%) crystals grown by modified Bridgman-Stockbarger method can be implanted with transition metals (TM) elements to check the influence of the crystal field of host material to energy levels of d-electrons. Additionally, optical constants (refractive index, extinction coefficient) can be modified selectively when implanted with TM due to split in spectroscopic terms. Chemical composition of obtained samples can be checked with XPS and PIXE methods. Host damage caused by ions implantation and electrical properties of implanted II-VI crystals are also important concerns.