NV10 Endstation


The implantation chamber is an EATON NV10 chamber.

The original system was based on a complete ion implanter from Eaton. However, as there is already a powerful tandem accelerator available in our facility, the part originally intended for ion generation and acceleration was dismantled, leaving us with the NV10 as the terminus. The original vacuum system was replaced, as well as the complete control technology.



Instead, the chamber was mounted in a frame equipped with two 1500 l/sec cryo pumps and a 30 m³/h scroll pump. This combination pumps the chamber about 6 orders of magnitude in 5 minutes. In addition, two additional 12 m³/h rotary vane pumps for the sliding seal (sealing area between vacuum and atmospheric pressure) were added. This is necessary with the NV10 because unlike our previous end station, ROBOTER and HVEC (Fixed Chambers and Electrostatic Deflection System), the chamber performs a vertical movement.

The ion beam passes through a diagnostic unit at the entrance to the chamber. This consists of a Faraday Cup (centering cup). The undeflected beam is bundled and centered in the Faraday Cup.

Dose measurement, chamber strokes and read-out of the data relevant for the implantation are taken over by a Dosecontroler dc 10-80 from the company tribotec-electronic GmbH. During implantation, the disc on which the wafers are mounted is rotated at a speed of 953 rpm. At the same time, the chamber (with a number of X strokes) is moved up and down, so that a homogeneous implantation takes place.

Through a slot in the disc, the ion current is measured during implantation in a slit cup located behind it. This is connected to the Dosecontroler dc 10-80 and is used for the measurement of the ion dose. Discs with recordings for 100, 125, 150 and 200 mm wafers are available.
200mm Wafer

disc 200mm

All functions and parameters such as wafer size, dose and measuring range are controlled by a computer, whereby the implantation in many areas is automated. Calibrations were performed for different ion types, energies and charge states.

The system has been set up as a backup system and terminus for thin wafers and high-current implantations.

It is envisaged to use the end station as a fully automatic system in its final configuration, that is, there will be a robot system for wafer handling.