In order to process wafers up to 150 mm in diameter, an end station with robots for handling under vacuum conditions is in use. The entire implantation cycle is performed computer-aided, fully automatic according to a customer-oriented recipe.

The robotic chamber is located between the implantation chamber and the two hoist chambers. The hoist chambers each contain a carrier with up to 25 wafers.

The robot arm turns to a selected hoist chamber and brings a wafer A from the carrier. The robot arm rotates with the wafer A in the robotic chamber and brings the wafer A into the implantation chamber. There, the wafer A is taken over by the station filing. The robotic arm withdraws from the implantation chamber. The wafer A is now taken over by the station Platen and placed in the implantation position. The implantation is started. During the implantation of the wafer A, the robot arm turns to the selected hoist chamber and fetches another wafer B from the carrier. The robot arm rotates with the wafer B in the robotic chamber and waits for the handover step.

After implantation, the wafer A is transferred from the station Platen back to the station filing.

The park arm takes the wafer A from the storage bin and retracts to the waiting position with the finished implanted wafer A. The robot arm brings the wafer B into the implantation chamber. There, the wafer B is taken over by the station filing. The robotic arm withdraws from the implantation chamber. The wafer B is now taken over by the station Platen and placed in the implantation position. The implantation is started. The park arm brings the wafer A from the waiting position into the implantation chamber. There, the wafer A is taken over by the station filing. The park arm retreats back to the waiting position. The robotic arm picks up the wafer A from the storage bin, withdraws from the implantation chamber, rotates in the robotic chamber, and brings the wafer A back into the carrier from which it was removed.

The other wafers are also continuously processed, so that the other wafers are implanted continuously. While the wafers of one carrier are implanted, the other carrier can be replaced and the vacuum restored.

During implantation, the wafer is at the end of a deep Faraday Cup, allowing the ion dose to be measured directly on the wafer. Faraday Cup, platen and entrance panel are mounted on a side door of the chamber. The input aperture can be adjusted to the size of the wafer.

A CTNR Faraday Cup at the end of the implantation chamber is used to adjust (focus and center) the undeflected beam. After this focusing and centering, the deflection voltage is applied and the zero current at the wafer, detected as Ablenkspannungsumkehrpunkt, and set with a can controller dc 101 from the company tribotec-electronic GmbH

http://www.tribotec-electronic.de/