High energy implantation of group IV elements into diamond

In order to produce group IV elements based colour centres in diamond, samples are prepared using high implantation energies. The aim is to have these centres situated deeply (>50nm) in the diamond to minimize the impact of charge fluctuations at the surface. The characterization afterwards is performed optically by looking at the homogeneity of different emitters emission wavelength and coherence properties.

Funded by

This project has no funding.


This project has no publications.


This project has no theses.