Quantification of Oxygen, Vanadium and Dopants (M) in V-M-O thin film libraries

VO2 is of interest due to its Semiconductor-to-Metal phase transition. Elmental addition can modulate the transition properties of VO2. To systematically study the effect of elemental doping, V-M-O thin film libraries with continuous composition spread are fabricated by magnetron reactive co-sputtering. The concentration of dopant (M) will be determined by Rutherford backscattering spectrometry (RBS). In addition, it has been reported that the stoichiometry of VOx, e.g., the ratio of oxygen to the metals, can also influence the transition properties. To estimate the amount of oxygen, Nuclear reaction analysis (NRA) will be performed on the libraries.

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