Partially fluorinated metal oxide films
We are currently investigating the deposition of metal oxide thin films by chemical vapor deposition processes (CVD) using partially fluorinated metal acetylacetonate complexes. We are particularly interested in the relationship between the degree of fluorination of the precursor complex and the degree of F-doping of the resulting metal oxide filmt (CoO and Co3O4). A correlation was already confirmed by TOF-SIMS but couldn't be quantifized. For quantification of the F-doping as well as the metal-to-oxygen relation and to further investigate the degree of N-doping from the precursor awe are intersted in RBS and DNRA measurements.