Implantation of Ni ions in diamond to create novel defect centers

In this project we would like to implant Ni into ultrapure as well as p-doped synthetic diamonds to create a class of inversion-symmetric Ni defects, the nickel vacancy center (NiV), which so far hasn't been studied in great detail. Theoretical investigations and preliminary experiments suggest that the NiV could offer electronic properties excelling those of the known color centers such as NV and SiV and the defects might therefore be of great interest for quantum technologies. We will use the samples fabricated at RUBION to perform optical spectrocopy experiments at high-resolution to validate the theoretically predicted electronic structure of the defect on an ensemble and single-defect level.

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